STMicroelectronics STB60NF06LT4 N-Channel MOSFET 60V 60A D2PAK

Advanced Power Management with STB60NF06LT4 N-Channel MOSFET

The STB60NF06LT4 from STMicroelectronics represents a breakthrough in power semiconductor technology, delivering exceptional performance for demanding industrial and automotive applications. This N-Channel MOSFET combines high voltage tolerance (60V) with impressive current handling capabilities (60A) in a compact D2PAK surface-mount package, making it ideal for modern power systems requiring both efficiency and miniaturization.

Key Technical Specifications

Engineered with STMicroelectronics' STripFET™ II technology, this device achieves an industry-leading on-state resistance (Rds(on)) of just 14mΩ at 30A and 10V gate-source voltage. Its advanced characteristics include:

This exceptional performance is maintained across extreme operating conditions thanks to its robust ±15V gate voltage tolerance and thermal stability. The device's 2000pF input capacitance at 25V ensures smooth switching operations while maintaining low power dissipation.

Application Versatility

Designed for modern power conversion systems, the STB60NF06LT4 excels in motor control, DC-DC converters, and battery management applications. Its surface-mount D2PAK package enables high power density designs while maintaining excellent thermal dissipation through its tabbed leadframe. Automotive engineers particularly value its AEC-Q101 qualification for under-hood applications where reliability is critical.

The device's 1V gate threshold voltage (at 250µA) allows direct interfacing with standard logic controllers, simplifying circuit design. Its 110W power dissipation rating (at case temperature) enables operation in high-temperature environments without derating.

Design Advantages

By integrating STMicroelectronics' second-generation STripFET technology, this MOSFET offers significant advantages over conventional power transistors:

• Reduced conduction losses through ultra-low Rds(on)
• Minimized switching losses via optimized gate charge characteristics
• Enhanced thermal management through D2PAK package
• Improved system reliability with wide operating temperature range

When combined with its tape-and-reel packaging format (ideal for automated assembly), the STB60NF06LT4 provides both technical and manufacturing advantages for high-volume production environments.

Technical Excellence in Power Electronics

STMicroelectronics' STripFET™ II technology represents a significant advancement in trench gate power MOSFETs. This manufacturing process achieves optimal balance between cell density and breakdown voltage characteristics, resulting in superior performance metrics compared to traditional planar MOSFET structures.

The device's 25V drain-source voltage rating with 60A current capability makes it particularly suitable for 48V automotive systems, industrial motor drives, and renewable energy converters. Its 66nC gate charge specification enables fast switching operations, reducing both conduction and switching losses in high-frequency applications.

Tags: Power Electronics, MOSFET, Voltage Regulator, Semiconductor, Electronic Components