STB55NF06T4 N-Channel MOSFET 60V 50A D2PAK Power Transistor
- Brand: STMicroelectronics
- Product Code: STB55NF06T4
- Availability: In Stock
$0.45
- Ex Tax: $0.45
High-Performance STB55NF06T4 N-Channel MOSFET for Demanding Power Applications
The STB55NF06T4 from STMicroelectronics represents the latest advancement in power transistor technology, combining exceptional electrical performance with robust thermal management capabilities. Part of the STripFET™ II series, this N-channel MOSFET delivers optimal efficiency for industrial and automotive applications requiring reliable high-current switching solutions. Engineered with advanced PowerFlat package technology, this D2PAK device offers superior heat dissipation while maintaining a compact footprint for modern electronics design.
Technical Excellence in Power Transistor Design
At its core, the STB55NF06T4 features a 60V drain-source voltage rating with an impressive continuous drain current capacity of 50A at 25°C. The device's remarkably low on-state resistance of just 18mOhm at 27.5A and 10V gate-source voltage minimizes conduction losses, making it ideal for high-efficiency power conversion systems. With a maximum gate charge of 60nC and input capacitance of 1300pF, this MOSFET ensures fast switching performance while maintaining thermal stability across its full operating range.
Operating within the industrial temperature range of -55°C to 175°C, the STB55NF06T4 demonstrates exceptional reliability in demanding environments. Its ±20V gate-source voltage protection and 4V threshold voltage specification provide robust gate control characteristics, while the surface-mount D2PAK package enables automated assembly processes and enhanced thermal performance through its exposed tab design.
| Parameter | Value |
|---|---|
| Max Voltage | 60 V |
| Continuous Current | 50A |
| Rds(on) Max | 18mΩ |
| Package Type | D2PAK |
| Power Dissipation | 110W |
Optimized for Modern Power Electronics
This STMicroelectronics device excels in a wide range of power management applications including DC-DC converters, motor control systems, and industrial automation equipment. The combination of high current capability and low on-resistance makes it particularly well-suited for battery management systems and high-efficiency power supplies. Its TO-263AB package format provides excellent mechanical stability while maintaining compatibility with standard PCB assembly processes.
Engineers will appreciate the device's comprehensive safety features including thermal shutdown protection and avalanche energy ratings. The STB55NF06T4's advanced design reduces electromagnetic interference (EMI) through optimized switching characteristics, contributing to cleaner power delivery in sensitive electronic systems. When compared to previous generation devices, this MOSFET offers a 15% improvement in thermal performance and a 20% reduction in switching losses.
Tags: Power Electronics, Semiconductor Devices, Surface Mount Transistors, High Current MOSFET, Industrial Components