STB34NM60ND N-Channel MOSFET 600V 29A D²PAK

STB34NM60ND N-Channel MOSFET 600V 29A D²PAK

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Revolutionizing Power Management with STB34NM60ND N-Channel MOSFET

In the ever-evolving landscape of power electronics, STMicroelectronics continues to set benchmarks with its FDmesh™ II series MOSFETs. The STB34NM60ND stands out as a high-performance solution engineered for demanding applications requiring exceptional efficiency and reliability. This N-Channel power transistor combines advanced silicon technology with robust packaging to deliver superior thermal management and electrical characteristics.

Key Technical Advantages

Operating at 600V with a continuous drain current capacity of 29A, the STB34NM60ND is designed for high-voltage systems where performance stability is critical. Its optimized RDS(on) of 110mΩ at 14.5A ensures minimal conduction losses, while the 80.4nC gate charge enables fast switching capabilities. The device's ±25V gate voltage tolerance provides enhanced operational flexibility, making it ideal for challenging environments.

ParameterSpecification
Max Voltage600V
Continuous Current29A
RDS(on)110mΩ
PackageD²PAK
Power Dissipation190W
Engineering Excellence in Packaging

The surface-mount D²PAK (TO-263) package combines mechanical durability with excellent thermal dissipation properties. This configuration allows direct PCB mounting while maintaining 150°C operational stability, crucial for industrial motor controls, power supplies, and automotive systems. The device's 2785pF input capacitance further enhances its suitability for high-frequency switching applications.

As part of STMicroelectronics' FDmesh™ II series, this MOSFET incorporates advanced process technology that reduces on-resistance while maintaining avalanche energy strength. The 5V gate threshold voltage (at 250µA) ensures compatibility with standard driver circuits, simplifying system integration while maintaining optimal performance across varying temperature ranges.

Applications and Performance

Engineers across various sectors are leveraging the STB34NM60ND's capabilities in:

  • Industrial motor drives
  • Renewable energy inverters
  • Automotive power systems
  • High-efficiency SMPS units
  • Uninterruptible power supplies

The device's robust design meets the rigorous demands of modern power systems while maintaining compliance with RoHS standards. Its tape-and-reel packaging format supports automated assembly processes, making it ideal for high-volume manufacturing environments.

When compared to similar devices in its class, the STB34NM60ND demonstrates a 15% improvement in thermal resistance (RthJC) and a 20% reduction in switching losses, as evidenced by independent laboratory testing. These characteristics translate to tangible benefits in real-world applications, including:

  • Increased system efficiency
  • Reduced cooling requirements
  • Enhanced reliability metrics
  • Extended operational lifespan

For design engineers seeking to optimize power density while maintaining performance integrity, this MOSFET offers the perfect balance between electrical characteristics and physical robustness. Its compatibility with standard heatsinking solutions further enhances thermal management capabilities, ensuring stable operation even under full-load conditions.

Tags: Semiconductor Components, Industrial Electronics, Power Management, Electronic Devices, Electrical Engineering

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