STB28NM60ND MOSFET N-Channel 600V 23A D²PAK

STB28NM60ND MOSFET N-Channel 600V 23A D²PAK

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STB28NM60ND: High-Performance Power MOSFET for Demanding Applications

STMicroelectronics' STB28NM60ND is a cutting-edge N-Channel Power MOSFET engineered for high-voltage industrial applications requiring exceptional reliability and thermal efficiency. Part of the FDmesh™ II series, this D²PAK packaged device combines advanced semiconductor technology with robust design specifications to deliver optimal performance in power conversion systems, motor drives, and energy-efficient lighting solutions.

Key Technical Specifications

Operating at 600V with a continuous drain current capacity of 23A, the STB28NM60ND features a remarkably low on-state resistance of 150mΩ at 10V gate-source voltage. Its advanced gate charge characteristics (62.5nC @ 10V) enable fast switching performance while maintaining low conduction losses. The device's ±25V gate voltage tolerance and 5V threshold voltage specification ensure compatibility with standard gate driver circuits while providing inherent protection against spurious turn-on events.

ParameterValue
Drain-Source Voltage600V
Continuous Drain Current23A
On-State Resistance150mΩ
Gate Charge62.5nC
Thermal & Mechanical Performance

Designed for high-power density applications, this surface-mount MOSFET utilizes a D²PAK (TO-263) package that provides excellent thermal dissipation capabilities. With a maximum power dissipation rating of 190W at case temperature and operating junction temperature tolerance up to 150°C, the device maintains stable performance in harsh thermal environments. The 2090pF input capacitance at 100V VDS ensures minimal impact on high-frequency switching operations.

Engineered for industrial power systems, the STB28NM60ND demonstrates exceptional reliability in motor control inverters, switched-mode power supplies (SMPS), and renewable energy systems. Its robust construction and advanced packaging technology make it particularly suitable for applications requiring high thermal cycling endurance and mechanical stability.

Design Flexibility & Applications

The device's combination of high voltage capability and low on-resistance enables designers to create more compact and efficient power systems. Typical applications include:

  • Industrial motor drives
  • High-voltage DC-DC converters
  • LED lighting systems
  • Home appliance power controls
  • Renewable energy inverters

As part of STMicroelectronics' FDmesh™ II series, this MOSFET incorporates the manufacturer's proprietary mesh layout technology that optimizes current distribution and reduces parasitic inductance. This technology advancement translates to improved switching performance and reduced electromagnetic interference (EMI) in practical applications.

Tags: Power MOSFET, High Voltage Transistor, Surface Mount Technology, STMicroelectronics Components, D²PAK Package

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