STMicroelectronics STB23N80K5 N-Channel MOSFET - 800V 16A D2PAK Power Transistor

STMicroelectronics STB23N80K5 N-Channel MOSFET - 800V 16A D2PAK Power Transistor

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High-Performance STB23N80K5 MOSFET for Demanding Power Applications

STMicroelectronics' STB23N80K5 N-channel MOSFET represents the cutting edge of power transistor technology in the MDmesh™ K5 series. This advanced semiconductor device combines exceptional electrical performance with robust thermal management capabilities, making it an ideal choice for high-voltage industrial and automotive applications. With its 800V rating and optimized on-resistance, this D²PAK packaged transistor delivers reliable operation in demanding environments while maintaining energy efficiency.

Technical Excellence in Power Management

At the heart of this device's impressive performance lies its 280mΩ maximum RDS(on) at 8A and 10V gate drive, ensuring minimal conduction losses even under heavy load conditions. The 33nC gate charge specification enables fast switching transitions, making it suitable for high-frequency power conversion circuits. The 1000pF input capacitance at 100V further enhances its switching performance while maintaining stability in critical applications.

ParameterSpecification
Max Voltage800 V
Continuous Drain Current16A @ 25°C
On-Resistance280mΩ (Max)
Gate Threshold Voltage5V @ 100µA
Power Dissipation190W (Tc)
Industrial-Grade Reliability

Engineered for harsh operating conditions, this surface-mount transistor maintains functionality across extreme temperatures (-55°C to 150°C), ensuring reliable operation in industrial automation, power supplies, and motor control systems. The ±30V gate voltage rating provides exceptional robustness against voltage transients, while the TO-263AB package offers excellent thermal dissipation through its exposed tab design.

The STB23N80K5's tape-and-reel packaging facilitates automated assembly processes, making it ideal for high-volume manufacturing in automotive electronics and renewable energy systems. Its compliance with RoHS standards ensures environmental responsibility without compromising performance.

Design Flexibility and Applications

This versatile power transistor excels in various applications including:

  • Switch-mode power supplies (SMPS)
  • Electric vehicle charging systems
  • Industrial motor drives
  • Uninterruptible power supplies (UPS)
  • Solar inverters and energy storage systems

The device's combination of high voltage capability and low on-resistance makes it particularly suitable for high-efficiency power conversion systems where thermal management is critical. Designers can leverage its linear operating area (SOA) to create compact, high-density power solutions without sacrificing reliability.

Performance-Driven Design Features

Key features that set this MOSFET apart include:

  • Advanced MDmesh™ K5 technology for reduced conduction losses
  • Optimized body diode characteristics for improved reliability in hard-switching applications
  • High avalanche energy rating for enhanced ruggedness
  • 100% avalanche tested for guaranteed performance
  • Lead-free, RoHS-compliant packaging

These characteristics make the STB23N80K5 an excellent choice for engineers seeking to improve system efficiency while maintaining robust operation in challenging environments. When combined with STMicroelectronics' comprehensive design resources and technical support, this device enables rapid development of innovative power solutions.

Tags: Power Electronics, Industrial Components, Automotive Electronics, Semiconductor Devices, Surface Mount Transistors

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