Infineon IRLZ24NPBF HEXFET MOSFET Transistor - N-Channel 55V 18A TO-220AB
- Brand: Infineon
- Product Code: IRLZ24NPBF
- Availability: In Stock
$0.22
- Ex Tax: $0.22
Revolutionizing Power Electronics: Infineon IRLZ24NPBF HEXFET MOSFET
In the ever-evolving landscape of power electronics, the Infineon IRLZ24NPBF HEXFET MOSFET emerges as a game-changer for engineers and designers seeking unparalleled performance in compact power solutions. This N-channel MOSFET transistor, housed in a TO-220AB package, combines cutting-edge semiconductor technology with robust design to deliver exceptional efficiency and reliability across diverse applications ranging from power supplies to motor control systems.
Technical Excellence in Power Management
At the heart of the IRLZ24NPBF's superior performance lies its advanced HEXFET technology. This proprietary Infineon innovation enables the transistor to achieve an impressively low on-state resistance of just 60mΩ at 11A, 10V gate drive. Such specifications translate to significant power savings and reduced thermal stress in demanding applications. The device's 55V drain-source voltage rating and 18A continuous drain current capacity make it particularly well-suited for high-efficiency switching applications where thermal management is critical.
| Parameter | Value |
|---|---|
| Max Drain-Source Voltage | 55V |
| Continuous Drain Current | 18A @ 25°C |
| On-State Resistance | 60mΩ @ 10V VGS |
| Gate Charge | 15nC @ 5V |
| Operating Temperature | -55°C to +175°C |
Design Advantages for Modern Applications
The IRLZ24NPBF's ±16V gate-source voltage tolerance provides enhanced flexibility in gate drive design, while its 2V gate threshold voltage enables efficient operation with standard logic-level controllers. These characteristics, combined with a 480pF input capacitance at 25V VDS, make this MOSFET particularly attractive for high-frequency switching applications in power conversion systems. Engineers will appreciate the device's thermal stability across its full operating temperature range, ensuring consistent performance even in harsh environments.
For power supply designers, the IRLZ24NPBF's 45W power dissipation rating (at case temperature) enables robust designs with ample thermal headroom. Its through-hole TO-220AB packaging facilitates easy integration into traditional PCB layouts while maintaining excellent thermal coupling to heatsinks. This combination of electrical and mechanical advantages makes it an ideal choice for applications requiring reliable power handling in constrained spaces.
Beyond the Specifications: Real-World Performance
In practical implementations, the IRLZ24NPBF's optimized hexagonal cell design reduces switching losses by up to 30% compared to conventional MOSFET architectures. This translates to measurable improvements in power supply efficiency, particularly in DC-DC converters and battery management systems. When deployed in motor control applications, its fast switching characteristics enable precise PWM control while minimizing electromagnetic interference (EMI) generation.
The device's inherent robustness is further enhanced by Infineon's rigorous quality standards. With guaranteed operation across the full industrial temperature range (-55°C to +175°C), the IRLZ24NPBF maintains stable performance in environments where other components might degrade. This reliability makes it a preferred choice for automotive electronics, industrial automation systems, and renewable energy applications where field failures are unacceptable.
Tags: N-Channel MOSFET, Power Electronics, Infineon Components, TO-220AB Transistor, HEXFET Series