IRF640NPBF HEXFET® N-Channel MOSFET 200V 18A TO-220AB
- Brand: Infineon
- Product Code: IRF640NPBF
- Availability: In Stock
$0.21
- Ex Tax: $0.21
IRF640NPBF HEXFET® N-Channel MOSFET: High-Performance Power Management Solution
Infineon Technologies' IRF640NPBF HEXFET® N-Channel MOSFET represents a benchmark in power electronics, combining robust performance with advanced thermal management. This 200V, 18A device in the TO-220AB package is engineered for demanding applications requiring efficient power switching and reliability under extreme conditions. Let's explore how this MOSFET's technical specifications translate into real-world advantages for engineers and designers.
Technical Excellence in Power MOSFET Design
At its core, the IRF640NPBF exemplifies Infineon's commitment to power semiconductor innovation. With a rated drain-source voltage of 200V and continuous drain current of 18A at 25°C, this N-channel MOSFET operates efficiently in high-voltage environments. Its 150mΩ maximum RDS(on) at 11A and 10V gate-source voltage ensures minimal conduction losses, making it ideal for power conversion systems where energy efficiency is critical.
| Parameter | Value |
|---|---|
| Max Voltage | 200V |
| Continuous Current | 18A |
| RDS(on) | 150mΩ |
| Gate Charge | 67nC |
| Operating Temp | -55°C to 175°C |
Advanced Thermal and Electrical Characteristics
The device's ±20V gate-source voltage rating provides robustness against voltage transients, while its 150W maximum power dissipation (at case temperature) enables operation in high-temperature environments. The 1160pF input capacitance at 25V VDS ensures fast switching performance, reducing switching losses in high-frequency applications. These characteristics make the IRF640NPBF particularly suited for power supplies, motor control systems, and industrial automation equipment.
Design Advantages in TO-220AB Packaging
The TO-220AB package combines mechanical durability with excellent thermal dissipation properties. This through-hole mounting solution facilitates easy integration into printed circuit boards while maintaining reliable thermal performance. The 4V gate threshold voltage (at 250µA) ensures compatibility with standard logic-level gate drivers, simplifying circuit design and reducing system complexity.
Real-World Applications and Performance Benefits
From DC-DC converters to motor drives, the IRF640NPBF delivers consistent performance across diverse applications. Its ability to maintain stable operation from -55°C to 175°C makes it suitable for harsh environments including industrial control systems, automotive electronics, and renewable energy systems. Designers appreciate the device's balance between high current capability and compact packaging, enabling efficient power delivery in space-constrained designs.
Tags: Power MOSFET, N-Channel Transistor, Infineon HEXFET, TO-220AB, Voltage Regulator