Infineon IRLML6402TRPBF P-Channel MOSFET 20V 3.7A SOT23
- Brand: Infineon
- Product Code: IRLML6402TRPBF
- Availability: In Stock
$0.05
- Ex Tax: $0.05
High-Performance HEXFET® MOSFET for Modern Electronics
Infineon's IRLML6402TRPBF represents the cutting-edge evolution of power transistor technology in the HEXFET® series. This P-Channel MOSFET combines advanced silicon design with robust packaging to deliver exceptional efficiency and reliability in space-constrained applications. As electronics continue shrinking while demanding higher power density, components like the IRLML6402TRPBF become essential for meeting modern design challenges.
Technical Excellence in Compact Form
Built on Infineon's proven HEXFET® technology, this 20V MOSFET achieves remarkable performance metrics that set new benchmarks for SOT23-packaged transistors. The device's 65mΩ Rds(on) rating at 4.5V gate drive ensures minimal conduction losses, while its 3.7A continuous drain current capability maintains stable operation even under demanding load conditions. The 1.2V gate threshold voltage enables seamless compatibility with modern low-voltage control circuits, making it ideal for battery-powered applications.
| Parameter | Value |
|---|---|
| Drain-Source Voltage | 20V |
| Continuous Drain Current | 3.7A |
| Rds(on) Max | 65mΩ @ 4.5V Vgs |
| Gate Charge | 12nC @ 5V |
Engineered for Reliability
The IRLML6402TRPBF's robust design extends beyond its electrical specifications. The Micro3™/SOT-23 package combines thermal efficiency with mechanical durability, while the ±12V gate voltage rating provides essential protection against voltage transients. With operating temperature range from -55°C to 150°C, this MOSFET maintains performance across extreme environmental conditions, making it suitable for industrial and automotive applications.
Applications and Implementation
This versatile component finds application in diverse fields including:
- Power management circuits
- Mechanical relay replacements
- Motor control systems
- Load switching applications
- Low-side switching configurations
Its 1.3W power dissipation rating and 633pF input capacitance make it particularly effective in high-frequency switching applications where fast transient response is critical. The tape & reel packaging format simplifies automated assembly processes, ensuring cost-effective production at scale.
Tags: IRLML6402TRPBF, P-Channel MOSFET, SOT23 Transistor, HEXFET Power Transistor, Infineon MOSFET