Infineon Technologies IRL3705ZLPBF N-Channel MOSFET 55V 75A TO-262
- Brand: Infineon
- Product Code: IRL3705ZLPBF
- Availability: In Stock
$0.53
- Ex Tax: $0.53
High-Performance Power Management with Infineon IRL3705ZLPBF MOSFET
In the ever-evolving landscape of power electronics, the Infineon IRL3705ZLPBF N-Channel MOSFET emerges as a reliable solution for engineers seeking superior performance in compact designs. This advanced HEXFET® power transistor combines cutting-edge technology with robust specifications, making it ideal for demanding applications in industrial, automotive, and consumer electronics sectors.
Technical Excellence in Power Transistor Design
Engineered with precision at Infineon's state-of-the-art facilities, this TO-262 packaged MOSFET delivers exceptional electrical characteristics. Operating at 55V with a continuous drain current capacity of 75A, it maintains optimal performance even under heavy load conditions. The device's 8mΩ maximum RDS(on) at 52A/10V ensures minimal power loss, translating to improved system efficiency and reduced thermal management requirements.
| Parameter | Specification |
|---|---|
| Drain-Source Voltage | 55V |
| Continuous Drain Current | 75A @ 25°C |
| RDS(on) | 8mΩ @ 10V VGS |
| Gate Charge | 60nC @ 5V VGS |
Advanced Features for Enhanced Reliability
The IRL3705ZLPBF incorporates Infineon's proprietary HEXFET® technology, featuring a unique cell structure that optimizes current distribution and minimizes thermal hotspots. Its ±16V gate voltage tolerance provides exceptional robustness against voltage spikes, while the 2880pF input capacitance at 25V VDS ensures stable operation in high-frequency switching applications. The through-hole TO-262 package offers excellent mechanical stability and thermal dissipation capabilities.
This power MOSFET excels in harsh operating environments, maintaining functionality from -55°C to 175°C. Its 130W maximum power dissipation rating (at Tc) enables reliable performance in high-temperature applications without derating. The 3V gate threshold voltage at 250µA facilitates easy integration with standard logic circuits, while the 4.5V/10V drive voltage compatibility ensures flexibility across various design requirements.
Applications and System Integration
Engineers can leverage this power transistor's capabilities in diverse applications including:
- Motor control systems for industrial automation
- High-efficiency power supplies and converters
- Automotive electronics and electric vehicle systems
- Renewable energy systems (solar inverters, wind turbines)
- Consumer electronics power management
The device's TO-262-3 long leads package simplifies PCB mounting while maintaining excellent thermal performance. Designers benefit from reduced component count and simplified circuit layouts due to its inherent high current handling capability and low on-resistance.
Why Choose Infineon's IRL3705ZLPBF?
As a member of Infineon's renowned HEXFET® family, this MOSFET offers several competitive advantages:
1. Proven Reliability: Backed by Infineon's decades of power semiconductor expertise, with extensive testing ensuring long-term performance in demanding environments.
2. Thermal Efficiency: Optimized package design enables efficient heat dissipation, extending component and system lifespan.
3. Design Flexibility: Wide operating voltage range and compatibility with common gate drive circuits simplify integration into various designs.
4. Performance Consistency: Tight parameter tolerances ensure predictable behavior across production batches and operating conditions.
While currently marked as 'Not For New Designs' by the manufacturer, the IRL3705ZLPBF remains a valuable component for replacement systems and legacy projects requiring field-proven performance. Its specifications continue to meet the demands of numerous applications where reliability and cost-effectiveness are paramount.
Technical Comparison and Selection
When evaluating power MOSFET options, engineers should consider the IRL3705ZLPBF against similar devices in Infineon's portfolio, including the IRFZ44N and IRLZ44N. The IRL3705ZLPBF distinguishes itself with superior RDS(on) characteristics and enhanced thermal management capabilities in the TO-262 package format.
| Model | RDS(on) | Current Rating | Package |
|---|---|---|---|
| IRL3705ZLPBF | 8mΩ | 75A | TO-262 |
| IRFZ44N | 18mΩ | 49A | TO-220 |
For applications requiring higher current capabilities, engineers might consider parallel configurations of this device or evaluate Infineon's newer power MOSFET solutions with advanced packaging technologies.
Procurement and Inventory Considerations
With a current stock quantity of 2200 units and available in tube packaging, this component offers flexible purchasing options. Designers should consider implementing proper inventory management strategies given its 'Not For New Designs' status, ensuring supply continuity for production requirements while planning for potential design transitions.
When handling this component, follow standard ESD protection protocols and observe Infineon's recommended soldering profiles to maintain device integrity during PCB assembly. Proper thermal management techniques, including adequate heatsinking and airflow planning, should be implemented to maximize device performance and longevity.
Tags: Infineon Device