Infineon IRFP4668PBF HEXFET® N-Channel MOSFET 200V 130A TO-247AC

Infineon IRFP4668PBF: High-Performance Power MOSFET for Demanding Applications

Infineon Technologies has long been a leader in semiconductor innovation, and the IRFP4668PBF HEXFET® N-Channel MOSFET exemplifies this legacy. Designed for high-power industrial applications, this 200V, 130A transistor delivers exceptional efficiency and reliability in a compact TO-247AC package. Whether you're engineering power supplies, motor drives, or renewable energy systems, the IRFP4668PBF combines advanced silicon technology with robust thermal management to meet the most demanding requirements.

Technical Excellence in Power Management

At the heart of this MOSFET lies a sophisticated design that balances performance and durability. With a rated drain-source voltage of 200V and continuous drain current of 130A at 25°C, this device excels in high-voltage switching applications. Its 9.7mΩ R_DS(on) at 81A and 10V gate drive minimizes conduction losses, while the 241nC gate charge ensures fast switching transitions. The ±30V gate voltage rating provides exceptional tolerance for transient conditions, making it ideal for harsh industrial environments.

The device's thermal performance is equally impressive, with 520W power dissipation capability at the case temperature. This allows engineers to push system performance limits while maintaining reliability across the -55°C to 175°C operating temperature range. The TO-247AC package combines industry-standard footprint compatibility with enhanced thermal dissipation through its through-hole mounting configuration.

Advanced Features for Modern Electronics

The IRFP4668PBF incorporates Infineon's proprietary HEXFET technology, which optimizes the trade-off between conduction and switching losses. Its 10V drive voltage requirement aligns perfectly with standard gate driver circuits, eliminating the need for specialized bias supplies. The 5V gate threshold voltage (at 250µA) ensures clean turn-on characteristics while maintaining compatibility with modern PWM controllers.

With 10,720pF input capacitance at 50V, the device maintains stable operation in high-frequency circuits while preventing unintended oscillations. The absence of inherent FET features (listed as '-') indicates a pure performance focus without compromises for specialized functions, making it ideal for applications where raw power handling is paramount.

Applications and System Integration

This power MOSFET shines in applications requiring both high voltage and current capabilities. Common uses include:

• Industrial motor drives and variable frequency drives
• High-power DC-DC converters
• Solar inverters and energy storage systems
• Electric vehicle charging infrastructure
• Welding equipment and industrial heating systems

The device's thermal robustness makes it particularly suitable for systems operating in elevated ambient temperatures. When designing with the IRFP4668PBF, engineers should consider proper heatsinking and airflow management to maintain optimal performance across the full operating range.

Design Considerations and Best Practices

For optimal performance, follow these design guidelines:

• Use proper gate drive circuitry with adequate current capability
• Implement thermal management solutions to maintain case temperature within specifications
• Consider paralleling multiple devices for higher current applications
• Use snubber circuits to protect against voltage spikes in inductive load applications
• Ensure proper PCB layout to minimize parasitic inductance

When comparing power MOSFETs for high-voltage applications, the IRFP4668PBF offers an excellent balance of performance parameters. Its combination of low R_DS(on), high current capability, and robust thermal characteristics makes it a compelling choice over alternatives like the STMicroelectronics STW110N200K or ON Semiconductor NTP110N20A.

Quality and Reliability Assurance

As part of Infineon's HEXFET family, the IRFP4668PBF undergoes rigorous quality testing to ensure long-term reliability. The device's active status in Infineon's product portfolio guarantees continued availability for production systems. With its through-hole mounting configuration, it offers superior mechanical stability compared to surface-mount alternatives, making it ideal for applications subject to thermal cycling or mechanical vibration.

Conclusion

The Infineon IRFP4668PBF represents the pinnacle of high-voltage N-channel MOSFET technology. Its combination of electrical performance, thermal capability, and industrial-grade reliability makes it an essential component for modern power electronics designers. Whether you're developing cutting-edge renewable energy systems or traditional industrial equipment, this device provides the foundation for efficient, reliable power conversion solutions.

Tags: HEXFET, N-Channel MOSFET, High Voltage MOSFET, Power Electronics, Infineon IRFP4668PBF