Infineon IRFP064NPBF HEXFET® MOSFET N-Channel 55V 110A TO-247AC

Revolutionizing Power Management with Infineon IRFP064NPBF HEXFET® MOSFET

The Infineon IRFP064NPBF HEXFET® MOSFET stands as a benchmark in power electronics, delivering exceptional performance for demanding applications. This N-Channel MOSFET combines advanced engineering with robust design, offering a drain-source voltage rating of 55V and a continuous drain current of 110A at 25°C. Housed in a TO-247AC package, this device is optimized for high-efficiency power conversion systems where reliability and thermal management are critical.

Key Technical Specifications

Designed for high-current switching applications, the IRFP064NPBF features an ultra-low on-resistance of just 8mΩ at 59A and 10V gate-source voltage. Its 10V drive voltage ensures compatibility with standard logic levels while maintaining minimal conduction losses. The device's 170nC gate charge rating enables fast switching performance, crucial for modern power supplies and motor control systems.

Engineered with Infineon's proven HEXFET technology, this MOSFET excels in thermal dissipation with a maximum power dissipation rating of 200W at case temperature. The ±20V gate-source voltage tolerance provides enhanced protection against voltage spikes, while the 4V gate threshold voltage ensures stable operation across varying load conditions.

Applications and Performance

Widely adopted in industrial motor drives, electric vehicle systems, and high-frequency power supplies, the IRFP064NPBF's TO-247AC package facilitates easy mounting and heat sinking. Its 4000pF input capacitance at 25V makes it particularly suitable for synchronous rectification and DC-DC conversion applications. The device's ruggedized design maintains stable performance even under harsh operating conditions, with an operating temperature range spanning from -55°C to 175°C junction temperature.

When compared to similar devices in its class, the IRFP064NPBF demonstrates superior switching characteristics. Its optimized Rds(on) vs. Qg figure of merit ensures minimal switching losses, making it ideal for applications requiring both high current handling and fast switching speeds. The device's inherent avalanche energy rating provides additional robustness in inductive load switching scenarios.

Design Advantages

For engineers seeking to optimize power system efficiency, this MOSFET offers several distinct advantages. The combination of low on-resistance and high current capability reduces conduction losses by up to 30% compared to previous generation devices. Its through-hole mounting configuration ensures reliable mechanical stability in vibration-prone environments, while the TO-247-3 package format maintains industry-standard footprints for easy design integration.

When implementing the IRFP064NPBF in circuit designs, particular attention should be given to gate drive circuitry. The device's 10V drive requirement aligns perfectly with standard MOSFET driver ICs, while its gate charge characteristics enable efficient operation at switching frequencies up to 100kHz. For parallel operation scenarios, the device's positive temperature coefficient ensures natural current sharing between multiple devices.

Quality and Reliability

As part of Infineon's HEXFET product line, the IRFP064NPBF undergoes rigorous quality testing to meet the highest industry standards. The device complies with RoHS environmental regulations and is manufactured using Infineon's proven PowerPAK process technology. With a guaranteed operating life exceeding 100,000 hours at rated conditions, this MOSFET provides long-term reliability for mission-critical applications.

Tags: Power MOSFET, HEXFET, Infineon Technologies, Industrial Electronics, TO-247AC