STMicroelectronics STB12NM50T4 MDmesh™ N-Channel MOSFET

High-Performance STB12NM50T4 MOSFET for Demanding Power Applications

STMicroelectronics' STB12NM50T4 MDmesh™ N-Channel MOSFET represents the pinnacle of power semiconductor technology, combining robust electrical characteristics with advanced packaging solutions. This high-voltage transistor operates at 550V while delivering 12A continuous drain current, making it an ideal choice for modern power electronics requiring both reliability and efficiency in demanding environments.

Technical Excellence in Power Management

Engineered with ST's proprietary MDmesh™ technology, this N-Channel MOSFET achieves exceptional performance metrics through its optimized silicon design and advanced packaging. The device maintains a maximum Rds(on) of 350mΩ at 6A/10V gate drive, ensuring minimal conduction losses in switching applications. Its high gate charge (Qg) of 39nC at 10V enables precise control in high-frequency power conversion circuits while maintaining thermal stability.

Advanced Features for Enhanced Performance

The STB12NM50T4 incorporates multiple design innovations that set it apart in power electronics applications. Its ±30V gate voltage rating provides robustness against voltage transients, while the 1000pF input capacitance at 25V ensures stable operation in high-speed switching environments. The device's thermal management capabilities are further enhanced through its D2PAK surface mount package, which combines excellent thermal dissipation with space-saving design.

With a maximum power dissipation of 160W (Tc), this MOSFET excels in high-temperature operating conditions. The device's 5V gate threshold voltage (Vgs(th)) at 50µA ensures compatibility with standard logic-level drivers while maintaining excellent channel control. The TO-263AB package format with reinforced creepage distance meets stringent insulation requirements for industrial and automotive applications.

Applications Across Industries

This versatile power transistor finds application in diverse fields including industrial motor drives, renewable energy systems, and automotive electronics. Its high-voltage capability makes it particularly suitable for solar inverters, uninterruptible power supplies (UPS), and electric vehicle charging infrastructure. The component's surface mount design simplifies PCB assembly while maintaining mechanical reliability in vibration-prone environments.

Key application areas include:
• Switching power supplies (SMPS)
• Motor control and drive systems
• Industrial automation equipment
• Energy-efficient lighting systems
• Battery management systems

Reliability and Longevity

Designed for extended operational life, the STB12NM50T4 meets rigorous industry standards for power device reliability. Its operating temperature range from -65°C to 150°C ensures stable performance in extreme environmental conditions. The device's robust construction includes enhanced die attach technology that minimizes thermal resistance and improves long-term reliability under thermal cycling conditions.

Backed by STMicroelectronics' comprehensive quality assurance program, this MOSFET offers exceptional field performance with minimal failure rates. The component's inherent design features, including avalanche energy rating and short-circuit withstand capability, further enhance system reliability in critical applications.

Tags: Power MOSFET, N-Channel Transistor, High Voltage FET, Surface Mount Device, Electronic Component